| PART |
Description |
Maker |
| APT11N80BC3 APT11N80BC3G |
Power MOSFET; Package: TO-247 [B]; ID (A): 11; RDS(on) (Ohms): 0.45; BVDSS (V): 800;
Super Junction MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| NCE07N65F |
Super Junction MOSFET
|
Wuxi NCE Power Semiconductor Co., Ltd
|
| APT94N60L2C3 |
Super Junction MOSFET
|
Advanced Power Technology Ltd.
|
| APT94N65B2C311 |
Super Junction MOSFET
|
Microsemi Corporation
|
| APT77N60JC3 |
Super Junction MOSFET
|
Advanced Power Technology Ltd.
|
| APT31N80JC3 |
SUPER JUNCTION MOSFET
|
Advanced Power Technology
|
| NCE20N50 NCE20N50F |
Super Junction MOSFET
|
Wuxi NCE Power Semiconductor Co., Ltd
|
| NCE60R2K2I |
N-Channel Super Junction Power MOSFET
|
Wuxi NCE Power Semiconducto...
|
| TPD65R750C |
650V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| TPD60R580C |
600V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| TPD60R350C TPD65R350C |
600V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
